HN1B04FU-Y(T5L,F,T Details_HN1B04FU-Y(T5L,F,T PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Power - Max	200mW
Frequency - Transition	150MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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