MAT01AHZ Details_MAT01AHZ PDF Document_Analog Devices Inc.-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max)	25mA
Voltage - Collector Emitter Breakdown (Max)	45V
Vce Saturation (Max) @ Ib, Ic	800mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	300nA
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	500mW
Frequency - Transition	450MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Supplier Device Package	TO-78-6

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