SG2013J Details_SG2013J PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	7 NPN Darlington
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	900 @ 500mA, 2V
Power - Max	-
Frequency - Transition	-
Operating Temperature	-55°C ~ 125°C (TA)
Mounting Type	Through Hole
Package / Case	16-CDIP (0.300", 7.62mm)
Supplier Device Package	16-CERDIP

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