BC856BDW1T3 Details_BC856BDW1T3 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	65V
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
Power - Max	380mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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