ULN2075B Details_ULN2075B PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	4 NPN Darlington (Quad)
Current - Collector (Ic) (Max)	1.75A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 2.25mA, 1.5A
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	1W
Frequency - Transition	-
Operating Temperature	-20°C ~ 85°C (TA)
Mounting Type	Through Hole
Package / Case	16-PowerDIP (0.300", 7.62mm)
Supplier Device Package	16-PowerDIP (20x7.10)

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