MPQ3798 PBFREE Details_MPQ3798 PBFREE PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	4 PNP (Quad)
Current - Collector (Ic) (Max)	50mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	125 @ 10mA, 5V
Power - Max	500mW
Frequency - Transition	60MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	TO-116

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