LS350 DIE Details_LS350 DIE PDF Document_Linear Integrated Systems, Inc.-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	10mA
Voltage - Collector Emitter Breakdown (Max)	25V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	200pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Power - Max	500mW
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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