HN4C51J(TE85L,F) Details_HN4C51J(TE85L,F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	2 NPN (Dual) Common Base
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	300mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Supplier Device Package	SMV

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