CA3083 Details_CA3083 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	5 NPN
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	15V
Vce Saturation (Max) @ Ib, Ic	700mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 3V
Power - Max	500mW
Frequency - Transition	450MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	16-DIP (0.300", 7.62mm)
Supplier Device Package	16-PDIP

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