MC1413BDG Details_MC1413BDG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	7 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V
Power - Max	-
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC

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