2SA1978-T1B-A Details_2SA1978-T1B-A PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	2dB @ 1GHz
Gain	10dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 15mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

Other

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