MMBTH10LT1G Details_MMBTH10LT1G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	650MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V
Current - Collector (Ic) (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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