UTV8100B Details_UTV8100B PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Frequency - Transition	470MHz ~ 860MHz
Noise Figure (dB Typ @ f)	-
Gain	8.5dB ~ 9.5dB
Power - Max	290W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1A, 5V
Current - Collector (Ic) (Max)	15A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55RT
Supplier Device Package	55RT

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