NTE2688 Details_NTE2688 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	450V
Frequency - Transition	20MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 4A, 5V
Current - Collector (Ic) (Max)	8A
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

Other

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