SD1275-01 Details_SD1275-01 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	16V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	9dB
Power - Max	70W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 250mA, 5V
Current - Collector (Ic) (Max)	8A
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	M113
Supplier Device Package	M113

Other

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