55GN01FA-TL-H Details_55GN01FA-TL-H PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f)	1.9dB @ 1GHz
Gain	11dB ~ 19dB @ 1GHz ~ 400MHz
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-81
Supplier Device Package	3-SSFP

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