BFG520W,115 Details_BFG520W,115 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.1dB ~ 2.1dB @ 900MHz
Gain	-
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 20mA, 6V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343 Reverse Pinning
Supplier Device Package	4-SO

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