CP223-2N3866-CT Details_CP223-2N3866-CT PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	500MHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	-
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 50mA, 5V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Other

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