MRF4427GR1 Details_MRF4427GR1 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	20dB
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 10mA, 5V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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