MZ0912B50Y,114 Details_MZ0912B50Y,114 PDF Document

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	1.215GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Current - Collector (Ic) (Max)	3A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	SOT-443A
Supplier Device Package	CDFM2

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