BFP843FH6327XTSA1 Details_BFP843FH6327XTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.25V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Gain	13.5dB ~ 25dB
Power - Max	125mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 15mA, 1.8V
Current - Collector (Ic) (Max)	55mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	PG-TSFP-4-1

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