NESG2021M16-T3-A Details_NESG2021M16-T3-A PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	25GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain	10dB ~ 18dB
Power - Max	175mW
DC Current Gain (hFE) (Min) @ Ic, Vce	130 @ 5mA, 2V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	M16, 1208

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