MSC2295-BT1G Details_MSC2295-BT1G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	150MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 10V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59

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