MT4S300U(TE85L,O,F Details_MT4S300U(TE85L,O,F PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4V
Frequency - Transition	26.5GHz
Noise Figure (dB Typ @ f)	0.55dB @ 2GHz
Gain	16.9dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 10mA, 3V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	USQ

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