MS2209 Details_MS2209 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	225MHz
Noise Figure (dB Typ @ f)	-
Gain	8.4dB
Power - Max	220W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 2A, 5V
Current - Collector (Ic) (Max)	7A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M218
Supplier Device Package	M218

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