MS1004 Details_MS1004 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,258(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	30MHz
Noise Figure (dB Typ @ f)	-
Gain	14.5dB
Power - Max	330W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 10A, 6V
Current - Collector (Ic) (Max)	40A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M177
Supplier Device Package	M177

Other

Price advantage, MS1004 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
UPA800T-T1	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS 2 NPN 10V 8GHZ 6SO	$0.70290	In Stock:1674
SD1726	STMicroelectronics	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 55V M174	No price	In Stock:18552
2N3663	Fairchild Semiconductor	Transistors - Bipolar - RF	Datasheet	SMALL SIGNAL BIPOLAR TRANSISTOR	$0.01940	In Stock:18554
NE46134-AZ	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 5.5GHZ SOT89	No price	In Stock:18564
MS2204	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 20V 1.09GHZ M115	No price	In Stock:18566