BFP760H6327XTSA1 Details_BFP760H6327XTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4V
Frequency - Transition	45GHz
Noise Figure (dB Typ @ f)	0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Gain	16.5dB ~ 29dB
Power - Max	240mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 35mA, 3V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	SOT-343

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