MRF327 Details_MRF327 PDF Document_MACOM Technology Solutions-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	33V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	9dB
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 5V
Current - Collector (Ic) (Max)	9A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	316-01
Supplier Device Package	316-01, STYLE 1

Other

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