MT3S20TU(TE85L) Details_MT3S20TU(TE85L) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 20mA, 5V
Gain	12dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	UFM

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