BFU730LXZ Details_BFU730LXZ PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3V
Frequency - Transition	53GHz
Noise Figure (dB Typ @ f)	0.75dB @ 6GHz
Gain	15.8dB
Power - Max	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce	205 @ 2mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Supplier Device Package	3-DFN1006 (1.0x0.6)

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