BFP780H6327XTSA1 Details_BFP780H6327XTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6.1V
Frequency - Transition	900MHz
Noise Figure (dB Typ @ f)	1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Gain	27dB
Power - Max	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce	85 @ 90mA, 5V
Current - Collector (Ic) (Max)	120mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	SOT343-4-2

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