2SC6023-TR-E Details_2SC6023-TR-E PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Frequency - Transition	14.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 2GHz
Gain	9.5dB ~ 11dB
Power - Max	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 15mA, 3V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	4-MCP

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