NE52418-A Details_NE52418-A PDF Document

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1dB ~ 1.5dB @ 2GHz
Gain	14dB ~ 16dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 3mA, 2V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	4-Super Mini Mold

Other

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