HFA3127R Details_HFA3127R PDF Document_Intersil-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	5 NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	3.5dB @ 1GHz
Gain	-
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 2V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-VFQFN Exposed Pad
Supplier Device Package	16-QFN (3x3)

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