BFP720FE6327 Details_BFP720FE6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	45GHz
Noise Figure (dB Typ @ f)	0.4dB ~ 1dB @ 150MHz ~ 10GHz
Gain	10.5dB ~ 28dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 13mA, 3V
Current - Collector (Ic) (Max)	25mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP

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