KSC2786YTA Details_KSC2786YTA PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	600MHz
Noise Figure (dB Typ @ f)	3dB ~ 5dB @ 100MHz
Gain	18dB ~ 22dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S

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