MS2206 Details_MS2206 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 100mA, 5V
Current - Collector (Ic) (Max)	1A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M115
Supplier Device Package	M115

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