MS2206 Details_MS2206 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,536(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 100mA, 5V
Current - Collector (Ic) (Max)	1A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M115
Supplier Device Package	M115

Other

Price advantage, MS2206 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NE68830-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 6V 4.5GHZ SOT323	No price	In Stock:18620
PBR951,215	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 10V 8GHZ TO236AB	No price	In Stock:18622
2315G	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	TRANSISTOR	No price	In Stock:18624
MAPKST0012	MACOM Technology Solutions	Transistors - Bipolar - RF	Datasheet	TRANSISTOR	No price	In Stock:18626
MPS5179	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 2GHZ TO92-3	No price	In Stock:18628