EC4H08C-TL-H Details_EC4H08C-TL-H PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Frequency - Transition	24GHz
Noise Figure (dB Typ @ f)	1.5dB @ 2GHz
Gain	17dB
Power - Max	50mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 1V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-UFDFN
Supplier Device Package	4-ECSP1008

Other

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