MS1006 Details_MS1006 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,684(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	30MHz
Noise Figure (dB Typ @ f)	-
Gain	14dB
Power - Max	127W
DC Current Gain (hFE) (Min) @ Ic, Vce	19 @ 1.4A, 6V
Current - Collector (Ic) (Max)	3.25A
Operating Temperature	200°C
Mounting Type	Stud Mount
Package / Case	M135
Supplier Device Package	M135

Other

Price advantage, MS1006 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 7GHZ SMINI	$0.45080	In Stock:4162
MPSH10_D27Z	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 25V 650MHZ TO92-3	No price	In Stock:18054
MS1227	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 18V 30MHZ M113	No price	In Stock:18056
DME400A	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	TRANSISTOR BIPO 55AW-1	No price	In Stock:18060
MCH4013-TL-E	ON Semiconductor	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 3.5V 22.5GHZ 4MCPH	No price	In Stock:18062