MS1006 Details_MS1006 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	30MHz
Noise Figure (dB Typ @ f)	-
Gain	14dB
Power - Max	127W
DC Current Gain (hFE) (Min) @ Ic, Vce	19 @ 1.4A, 6V
Current - Collector (Ic) (Max)	3.25A
Operating Temperature	200°C
Mounting Type	Stud Mount
Package / Case	M135
Supplier Device Package	M135

Other

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