MS2212 Details_MS2212 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)	-
Gain	8.1dB ~ 8.9dB
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 500mA, 5V
Current - Collector (Ic) (Max)	1.8A
Operating Temperature	250°C (TJ)
Mounting Type	Chassis Mount
Package / Case	M222
Supplier Device Package	M222

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