NTE108-1 Details_NTE108-1 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	600MHz
Noise Figure (dB Typ @ f)	6dB @ 60MHz
Gain	15dB
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-106-3 Domed
Supplier Device Package	TO-106

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