MRF429 Details_MRF429 PDF Document_MACOM Technology Solutions-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	15dB
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V
Current - Collector (Ic) (Max)	16A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	211-11, Style 2
Supplier Device Package	211-11, Style 2

Other

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