UMIL3B Details_UMIL3B PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	-
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	225MHz ~ 400MHz
Noise Figure (dB Typ @ f)	-
Gain	13dB
Power - Max	11W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100A, 5V
Current - Collector (Ic) (Max)	700mA
Operating Temperature	150°C
Mounting Type	Stud Mount
Package / Case	55FT
Supplier Device Package	55FT

Other

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