BFS17PE6327HTSA1 Details_BFS17PE6327HTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.4GHz
Noise Figure (dB Typ @ f)	3.5dB ~ 5dB @ 800MHz
Gain	-
Power - Max	280mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 2mA, 1V
Current - Collector (Ic) (Max)	25mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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