MCH4016-TL-H Details_MCH4016-TL-H PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	18dB
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 5V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-MCPH

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