MRF555GT Details_MRF555GT PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	16V
Frequency - Transition	470MHz
Noise Figure (dB Typ @ f)	-
Gain	12.5dB
Power - Max	3W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 5V
Current - Collector (Ic) (Max)	500mA
Operating Temperature	-
Mounting Type	-
Package / Case	-
Supplier Device Package	-

Other

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