HFA3096B Details_HFA3096B PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	-
Transistor Type	3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max)	12V, 15V
Frequency - Transition	8GHz, 5.5GHz
Noise Figure (dB Typ @ f)	3.5dB @ 1GHz
Gain	-
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC

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