NTE2501 Details_NTE2501 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	300V
Frequency - Transition	70MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126

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