BFG480W,135 Details_BFG480W,135 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.5V
Frequency - Transition	21GHz
Noise Figure (dB Typ @ f)	1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain	16dB
Power - Max	360mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 80mA, 2V
Current - Collector (Ic) (Max)	250mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	CMPAK-4

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