NTE316 Details_NTE316 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.4GHz
Noise Figure (dB Typ @ f)	4.5dB @ 450MHz
Gain	15dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 2mA, 5V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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